Recently, the selection results of the "TOP-10 Breakthrough for Fundamental Semiconductor Research in China" were announced. The research results of the team of Academician Huang Wei and Professor Chen Yonghua from the Institute of Advanced Materials won the "TOP-10 Breakthrough for Fundamental Semiconductor Research in China" in 2021.
The team of Academician Huang Wei and Professor Chen Yonghua has prepared α-FAPbI3 perovskite semiconductors that are stable at room temperature and high humidity (greater than 90%). For the first time, they proposed to grow lead iodide thin films with alignment and nanoscale "ion channels" based on methylamine formate ionic liquid solvent, which can realize the rapid formation of stable α-FAPbI3. The unencapsulated device maintained 80% and 90% of its initial efficiency for 500 hours under continuous heating and continuous illumination at 85°C, respectively. The results were published in the top international journal Science in March 2021 (Science, 2021, 371(6536): 1359-1364).
In 2021, a total of 46 achievements in the second "TOP-10 Breakthrough for Fundamental Semiconductor Research in China" selection activity will be eligible for candidate recommendation. In January 2022, a selection committee composed of 77 experts in the semiconductor field has undergone a rigorous review and selected 10 outstanding achievements, which will be awarded the "TOP-10 Breakthrough for Fundamental Semiconductor Research in China" in 2021. At the same time, 11 achievements won the 2021 "TOP-10 Breakthrough for Fundamental Semiconductor Research in China" nomination award.
Figure. Methylamine formate ionic liquid solution, lead iodide "ion channel" and photovoltaic device stability
